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  • 主办单位:
    中国光学工程学会清华大学上海理工大学
  • 名誉主编: 庄松林 院士
  • 国际主编: 顾敏 院士
  • 主       编:
    孙洪波 教授仇旻 教授
  • 创       刊:2020年3月
  • ISSN:2662-1991
最新上线
In-situ grown polymer-ceramic scintillator and applications on X-ray multi-energy curved surface imaging
Hongyu Lv, Chen Huo, Kenan Zhang, Qun Hao, Menglu Chen
 doi: 10.1186/s43074-025-00179-2
Abstract(0) PDF(0)
Abstract:
In-situ grown scintillators have attracted extensive attention in the field of high-resolution X-ray imaging due to their excellent film uniformity. In the process of in-situ growth, reasonable selection of polymer host is vital, which can effectively inhibit nanocrystal agglomeration and Ostwald ripening. Still, rationality and effective basis for polymer selection is lacked. Here, we propose a general in-situ growth method on a variety of perovskite with prototypical polymers. Both theoretical calculations and experimental results show that the performance of the in-situ grown film is improved by the electron-donating ability of the Lewis base functional group and the strength of the chemical bond in the polymer. Moreover, vitamins doping further reduce grain boundaries and adequately passivating the surface defects. Cs3Cu2I5 perovskite with polyvinyl alcohol host film exhibit yield of 55521 photons/MeV, spatial resolution of 14.0 lp mm−1 and long-term stability. Due to scintillator mechanical deformability, curved X-ray imaging has been achieved, overcoming planar sensor limitations in complex geometric applications. Benefiting from the universal applicability of this growth method, we synthesize a series of scintillators exhibiting distinct X-ray energy-dependent response. Through strategic architectural design of scintillator hetero-stacking, we achieve four-channel multispectral X-ray imaging across the 10 keV to 60 keV energy range.
Extreme anti-interference capability in temporal and frequency domain by utilizing laser Antenna in optical wireless communication system
Kun Qian, Hongyu Yang, Jingzhou Li, Dong Liang, Jiaxi Li, Yichi Zhong, Zhuhua Xu, Jiahao Zhang, Hanhuai Yang, Xizhe Liang, Junping Zhang, Hongxing Dong, Long Zhang
 doi: 10.1186/s43074-025-00181-8
Abstract(10) PDF(1)
Abstract:
Fluorescent antennas have emerged as promising alternatives to conventional lens modules in optical wireless communication (OWC) systems, offering an expanded field of view (FOV) by surpassing the étendue limit. However, their limited anti-interference performance in both time and frequency domains has constrained their widespread applications. Herein, we introduce a novel “laser antenna” that integrates stimulated emission from high-quality perovskite microlasers into the optical antenna design. Achieving a theoretical bandwidth of up to 36.2 GHz and a signal-to-noise ratio (SNR) of up to 40 dB, this laser antenna demonstrates strong anti-interference capabilities in the temporal domain. Furthermore, spectral analysis using amplitude shift keying (ASK) modulation reveals its distinct periodicity, tunability, and recoverability, enabling robust frequency selectivity even in the presence of interference. These findings establish the laser antenna’s potential to overcome critical limitations of conventional OWC systems, thereby paving the way for efficient, stable, and high-performance optical wireless links.
Colorless and unidirectional diffractive-type solar concentrators compatible with existing windows
Dewei Zhang, Zhenghao Guo, Chun-Ting Xu, Jianqing Li, Yan-Qing Lu, Wei Hu
 doi: 10.1186/s43074-025-00178-3
Abstract(19) PDF(0)
Abstract:
Solar concentrators laterally converge solar energy to the side of architectural glass and are attractive candidates for building-integrated photovoltaics. Present available luminescent-type and scattering-type solar concentrators suffer from omnidirectional waveguide induced low efficiency, coloring/hazing restrained aesthetic quality, and poor compatibility with existing architectural glass. Here, we propose a diffractive solar concentrator via directly coating cholesteric liquid crystal (CLC) layers onto the architectural glass. The stacked CLC layers with submicron lateral periodic alignment enable broadband and unidirectional waveguiding inside the glass, and thus supply a high-efficient platform for transmissive solar energy capturing with merits of high aesthetic quality and economic viability. A 1-inch-diameter prototype powers a 10-mW fan outdoors, and a typical 2-m-wide window is calculated to concentrate solar energy by 50 times. The design is expected to bring a global terawatt-scale green energy supply and billion-ton annual carbon emission reduction, meeting with the sustainable development of human society.
Multifunctional metamorphic III-V distributed bragg reflectors grown on si substrate for resonant cavity surface emitting devices
Tsimafei Laryn, Rafael Jumar Chu, Yeonhwa Kim, Eunkyo Ju, Chunghyun Ahn, Hyun-Yong Yu, May Madarang, Hojoong Jung, Won Jun Choi, Daehwan Jung
 doi: 10.1186/s43074-025-00180-9
Abstract(12) PDF(0)
Abstract:
Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications. However, the devices are typically grown on expensive and small-size III-V substrates. Si substrates can offer much improved scalability, lower cost and higher thermal properties but present significant challenges such as the formation of crystalline defects from the heteroepitaxial growth of III-V semiconductors on Si. Here, we propose multifunctional metamorphic In0.1Ga0.9As/AlAs distributed Bragg reflectors (DBRs) on Si which serve as a bottom mirror with a high reflectivity of 99.8% while simultaneously reducing the crystalline defect density by a factor of three, compared to GaAs/AlAs DBR on Si. The proposed DBR structure also exhibits a crack-free and exceptionally smooth surface morphology with root-mean-square roughness of 1.2 nm, which is five times smoother than the conventional GaAs/AlAs structure on Si. Furthermore, as proof of concept, InAs quantum dot surface-emitting diodes are fabricated on the metamorphic III-V DBR/Si templates and their performances are analyzed in comparison to those grown on native GaAs wafers. A narrow electroluminescence linewidth of 11.5 meV is observed, confirming that the multifunctional metamorphic DBR is promising for a scalable and more techno-economic surface-emitting III-V optoelectronics grown on Si substrates.