All-silicon photovoltaic detectors with deep ultraviolet selectivity

Yuqiang Li; Wei Zheng; Feng Huang

doi:10.1186/s43074-020-00014-w

All-silicon photovoltaic detectors with deep ultraviolet selectivity

doi: 10.1186/s43074-020-00014-w

基金项目:

This work was supported by the National Natural Science Foundation of China (61427901, 61604178, 91833301 and U1505252).

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出版历程
- 收稿日期: 2020-04-08
- 录用日期: 2020-05-29
- 网络出版日期: 2020-06-08

All-silicon photovoltaic detectors with deep ultraviolet selectivity

State key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P

Funds:

This work was supported by the National Natural Science Foundation of China (61427901, 61604178, 91833301 and U1505252).

摘要

摘要: For a practical photodetector, fast switching speed and high on-off ratio are essential, and more importantly, the integration capability of the device finally determines its application level. In this work, the judiciously engineered Si₃N₄/Si detector with an open-circuit voltage of 0.41 V is fabricated by chemical vapor deposition methods, and exhibits good performance with repeatability. The advanced integration technology of Si₃N₄ and Si is the foundation for imaging functions in the near future. Compare to the current commercial Si p-i-n photodiodes, the detector cuts off the long-wavelength UV light over 260 nm, realizing the spectrum selectivity without filters or complexed accessories. The stability of this detector is further characterized by cycling response, temperature and light intensity dependence tests. In addition, we also analyze and explain the inherent mechanisms that govern the different operations of two types of Si₃N₄/Si photodetectors.
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Abstract: For a practical photodetector, fast switching speed and high on-off ratio are essential, and more importantly, the integration capability of the device finally determines its application level. In this work, the judiciously engineered Si₃N₄/Si detector with an open-circuit voltage of 0.41 V is fabricated by chemical vapor deposition methods, and exhibits good performance with repeatability. The advanced integration technology of Si₃N₄ and Si is the foundation for imaging functions in the near future. Compare to the current commercial Si p-i-n photodiodes, the detector cuts off the long-wavelength UV light over 260 nm, realizing the spectrum selectivity without filters or complexed accessories. The stability of this detector is further characterized by cycling response, temperature and light intensity dependence tests. In addition, we also analyze and explain the inherent mechanisms that govern the different operations of two types of Si₃N₄/Si photodetectors.
- Photodetection /
- Silicon nitride /
- Photovoltaic /
- Deep ultraviolet /
- Silicon based

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参考文献(34)

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