Integrated transmitter devices on InP exploiting electro-absorption modulation

M. Baier; N. Grote; M. Moehrle; A. Sigmund; F. M. Soares; M. Theurer; U. Troppenz

doi:10.1186/s43074-020-0003-4

Integrated transmitter devices on InP exploiting electro-absorption modulation

doi: 10.1186/s43074-020-0003-4

基金项目:

PARADIGM (www.paradigm.jeppix.eu), and InPulse (www.inpulse.jeppix.eu). The 4-array EML chips (refer to Fig. 7) was developed in the framework of the PIANO+-ALOHA project (grant # 01BP1125). The other topics have been conducted on HHI internal funding.

For the development of the generic PIC platform outlined in the article funding has been received from the European Commission through the projects EuroPIC (www.europic.jeppix.eu)

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出版历程
- 收稿日期: 2019-10-10
- 录用日期: 2019-12-29
- 网络出版日期: 2020-03-04

Integrated transmitter devices on InP exploiting electro-absorption modulation

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Einsteinufer 37, 10587, Berlin, Germany

Funds:

For the development of the generic PIC platform outlined in the article funding has been received from the European Commission through the projects EuroPIC (www.europic.jeppix.eu)

摘要

摘要: InP technology is the principal enabler for implementing fully monolithic photonic integrated circuits (PIC), uniquely including transmitter elements. In this article we present an overview of recent achievements on ultra-high speed electro-absorption modulated lasers (EML) which represent a simple transmitter PIC comprising a singlemode laser diode and an electro-absorption modulator. Using a so-called identicallayer approach single-wavelength modulation rates up to 100 Gb/s have been accomplished. By additionally integrating an optical amplifier section modulated optical output power of > 10 dBm has been achieved. Multi-level amplitude modulation was successfully demonstrated. Extended EML chips designed for wavelength-division and space-division multiplexing, respectively, will be presented. For dual-polarization transmission a novel EML related transmitter as well as a corresponding receiver PIC have been introduced. The latter devices were made on a generic PIC platform that is available for open-access foundry service.
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Abstract: InP technology is the principal enabler for implementing fully monolithic photonic integrated circuits (PIC), uniquely including transmitter elements. In this article we present an overview of recent achievements on ultra-high speed electro-absorption modulated lasers (EML) which represent a simple transmitter PIC comprising a single-mode laser diode and an electro-absorption modulator. Using a so-called identical-layer approach single-wavelength modulation rates up to 100 Gb/s have been accomplished. By additionally integrating an optical amplifier section modulated optical output power of > 10 dBm has been achieved. Multi-level amplitude modulation was successfully demonstrated. Extended EML chips designed for wavelength-division and space-division multiplexing, respectively, will be presented. For dual-polarization transmission a novel EML related transmitter as well as a corresponding receiver PIC have been introduced. The latter devices were made on a generic PIC platform that is available for open-access foundry service.
- Electro-absorption modulated laser /
- Booster amplifier /
- 100 Gb/s modulation /
- Photonic integrated circuit /
- Building block /
- Polarization multiplexing /
- Polarization sensitive receiver

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参考文献(15)

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