High-speed Si-Ge avalanche photodiodes

Binhao Wang^{1, 2},
Jifang Mu³

1.
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, China
2.
University of Chinese Academy of Sciences, Beijing, China
3.
Key Laboratory of Space Precision Measurement Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, China

Funds: This work was supported by Shaanxi Province Overseas High-Level Talents Program, Chinese Academy of Sciences 100 Talents Program, Xi’an Institute of Optics and Precision Mechanics Start-Up Funding, and State Key Laboratory of Transient Optics and Photonics Independent Research Project.

摘要

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Abstract: High-speed optical interconnects of data centers and high performance computers (HPC) have become the rapid development direction in the field of optical communication owing to the explosive growth of market demand. Currently, optical interconnect systems are moving towards higher capacity and integration. High-sensitivity receivers with avalanche photodiodes (APDs) are paid more attention due to the capability to enhance gain bandwidth. The impact ionization coefficient ratio is one crucial parameter for avalanche photodiode optimization, which significantly affects the excess noise and the gain bandwidth product (GBP). The development of silicon-germanium (Si-Ge) APDs are promising thanks to the low impact ionization coefficient ratio of silicon, the simple structure, and the CMOS compatible process. Separate absorption charge multiplication (SACM) structures are typically adopted in Si-Ge APDs to achieve high bandwidth and low noise. This paper reviews design and optimization in high-speed Si-Ge APDs, including advanced APD structures, APD modeling and APD receivers.
- Avalanche photodiode /
- Photodetector /
- Optical interconnect /
- Data communication

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参考文献(122)

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