All-silicon photovoltaic detectors with deep ultraviolet selectivity

Yuqiang Li; Wei Zheng; Feng Huang

doi:10.1186/s43074-020-00014-w

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Yuqiang Li, Wei Zheng, Feng Huang. All-silicon photovoltaic detectors with deep ultraviolet selectivity[J]. PhotoniX. doi: 10.1186/s43074-020-00014-w

Citation:

Yuqiang Li, Wei Zheng, Feng Huang. All-silicon photovoltaic detectors with deep ultraviolet selectivity[J]. PhotoniX. doi: 10.1186/s43074-020-00014-w

Yuqiang Li, Wei Zheng, Feng Huang. All-silicon photovoltaic detectors with deep ultraviolet selectivity[J]. PhotoniX. doi: 10.1186/s43074-020-00014-w

Citation:

Yuqiang Li, Wei Zheng, Feng Huang. All-silicon photovoltaic detectors with deep ultraviolet selectivity[J]. PhotoniX. doi: 10.1186/s43074-020-00014-w

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All-silicon photovoltaic detectors with deep ultraviolet selectivity

doi: 10.1186/s43074-020-00014-w

State key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P

Funds:

This work was supported by the National Natural Science Foundation of China (61427901, 61604178, 91833301 and U1505252).

Received Date: 2020-04-08
Accepted Date: 2020-05-29

Available Online: 2020-06-08

Abstract

Abstract

For a practical photodetector, fast switching speed and high on-off ratio are essential, and more importantly, the integration capability of the device finally determines its application level. In this work, the judiciously engineered Si₃N₄/Si detector with an open-circuit voltage of 0.41 V is fabricated by chemical vapor deposition methods, and exhibits good performance with repeatability. The advanced integration technology of Si₃N₄ and Si is the foundation for imaging functions in the near future. Compare to the current commercial Si p-i-n photodiodes, the detector cuts off the long-wavelength UV light over 260 nm, realizing the spectrum selectivity without filters or complexed accessories. The stability of this detector is further characterized by cycling response, temperature and light intensity dependence tests. In addition, we also analyze and explain the inherent mechanisms that govern the different operations of two types of Si₃N₄/Si photodetectors.
- Photodetection,
- Silicon nitride,
- Photovoltaic,
- Deep ultraviolet,
- Silicon based

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References(34)

References

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