Integrated transmitter devices on InP exploiting electro-absorption modulation

M. Baier; N. Grote; M. Moehrle; A. Sigmund; F. M. Soares; M. Theurer; U. Troppenz

doi:10.1186/s43074-020-0003-4

Article Contents

Article Navigation > PhotoniX > 2020 > Accepted Manuscript

M. Baier, N. Grote, M. Moehrle, A. Sigmund, F. M. Soares, M. Theurer, U. Troppenz. Integrated transmitter devices on InP exploiting electro-absorption modulation[J]. PhotoniX. doi: 10.1186/s43074-020-0003-4

Citation:

M. Baier, N. Grote, M. Moehrle, A. Sigmund, F. M. Soares, M. Theurer, U. Troppenz. Integrated transmitter devices on InP exploiting electro-absorption modulation[J]. PhotoniX. doi: 10.1186/s43074-020-0003-4

Citation:

PDF( 2205 KB)

Integrated transmitter devices on InP exploiting electro-absorption modulation

doi: 10.1186/s43074-020-0003-4

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Einsteinufer 37, 10587, Berlin, Germany

Funds:

PARADIGM (www.paradigm.jeppix.eu), and InPulse (www.inpulse.jeppix.eu). The 4-array EML chips (refer to Fig. 7) was developed in the framework of the PIANO+-ALOHA project (grant # 01BP1125). The other topics have been conducted on HHI internal funding.

For the development of the generic PIC platform outlined in the article funding has been received from the European Commission through the projects EuroPIC (www.europic.jeppix.eu)

Received Date: 2019-10-10
Accepted Date: 2019-12-29

Available Online: 2020-03-04

Abstract

Abstract

InP technology is the principal enabler for implementing fully monolithic photonic integrated circuits (PIC), uniquely including transmitter elements. In this article we present an overview of recent achievements on ultra-high speed electro-absorption modulated lasers (EML) which represent a simple transmitter PIC comprising a single-mode laser diode and an electro-absorption modulator. Using a so-called identical-layer approach single-wavelength modulation rates up to 100 Gb/s have been accomplished. By additionally integrating an optical amplifier section modulated optical output power of > 10 dBm has been achieved. Multi-level amplitude modulation was successfully demonstrated. Extended EML chips designed for wavelength-division and space-division multiplexing, respectively, will be presented. For dual-polarization transmission a novel EML related transmitter as well as a corresponding receiver PIC have been introduced. The latter devices were made on a generic PIC platform that is available for open-access foundry service.
- Electro-absorption modulated laser,
- Booster amplifier,
- 100 Gb/s modulation,
- Photonic integrated circuit,
- Building block,
- Polarization multiplexing,
- Polarization sensitive receiver

FullText(HTML)

References(15)

References

[1]	Photonic Integrated Circuits Market to Reach $3.3 Billion by 2027. 2019. https://www.novuslight.com/photonic-integrated-circuits-market-to-reach-3-3-billion-by 2027_N9494.html
[2]	Mack M, Peterson M, Gloeckner S, Narasimha A, Koumans R, Dobbelaere PD. Method and system for a light source assembly supporting direct coupling to an integrated circuit, US8168939B2; 2012.
[3]	Wang Z, Abbasi A, Dave U, Kurnari S, Kunert B, Merckling C, Pantouvaki M, Shi Y, Tian B, Van Gasse K, Verbist J, Wang R, Xie W, Zhang J, Zhu Y, Bauwelinck J, Yin X, Hens Z, Van Campenhout J, Kuyken B, Baets R, Morthier G, Van Thourhout D, Roelkens G. Novel light source integration approaches for silicon photonics. Laser Photonics Rev. 2017;11:1–21.
[4]	Kazmierski C, Chimot N, Jorge F, Konczykowska A, Blache F, Decobert J, Alexandre F, Garreau A, da Silva R. 80 Gb/s multi-level BPSK experiment with an InP monolithic source based on prefixed optical phase switching, 26th IPRM (Montpellier, France), paper Th-B2–1; 2014.
[5]	Moehrle M, Klein H, Bornholdt C, Przyrembel G, Sigmund A, Molzow W-D, Troppenz U, Bach H-G. InGaAlAs RW-based electro-absorption-modulated DFB-lasers for high speed applications, SPIE photonics Europe 2014, Brussels, invited paper 9134–44; 2014.
[6]	Theurer M, Przyrembel G, Sigmund A, Molzow WD, Troppenz U, Möhrle M. 56 Gb/s L-band InGaAlAs ridge waveguide electro-absorption modulated laser with integrated SOA. Phys Status Solidi. 2016;A213:970–4.
[7]	Theurer M, Zhang H, Wang Y, Chen W, Zeng L, Troppenz U, Przyrembel G, Sigmund A, Moehrle M, Schell M. 2 x 56 GB/s from a double side electroabsorption modulated DFB laser and application in novel optical PAM4 generation. J Lightw Techn. 2017;35(4):706–10.
[8]	Theurer M, Moehrle M, Troppenz U, Bach H-G, Sigmund A, Przyrembel G, Gruner M, Schell M. 4 x 56 Gb/s high output power electroabsorption modulated laser array with up to 7km fibre transmission in L-band. J Lightw Techn. 2018;36(2):181–6.
[9]	Baier M, et al. 112 Gb/s PDM-PAM4 generation and 80 km transmission using a novel monolithically integrated dual-polarization electro-absorption modulator InP PIC. Proc ECOC. 2017;2017:1–3.
[10]	Baier M, Soares FM, Gaertner T, Schoenau A, Moehrle M, Schell M. New Polarization Multiplexed Externally Modulated Laser PIC, ECOC 2018 (Rome, Italy), paper Mo4C.2; 2018.
[11]	Baier M, Soares FM, Gaertner T, Moehrle M, Schell M. Fabrication tolerant integrated polarization rotator design using the Jones Calculus. J Lightw Technol. 2019;37(13):3106–12.
[12]	Morsy-Osman MH, Chagnon M, Plant DV. Four-dimensional modulation and stokes direct detection of polarization division multiplexed intensities, inter polarization phase and inter polarization differential phase. J Lightw Technol. 2016;34:1585–92.
[13]	M. Baier, F.M. Soares, A. Schoenau, Y. D Gupta, D. Melzer, M. Moehrle, M. Schell: Fully integrated Stokes Vector Receiver for 400 Gbit/s”, OFC 2019 (San Diego), paper Tu3E.2 (2019).
[14]	F. M. Soares et al.: High-Performance InP PIC Technology Development based on a Generic Photonic Integration Foundry, OFC 2018, paper M3F.3 (2018).
[15]	K. Shi et al.: System Demonstration of Nanosecond Wavelength Switching with Burst-mode PAM4 Transceiver“, ECOC 2019, paper PDP 3.7 (2019).