Turn off MathJax
Article Contents
Xing Yang, Shihuan Ran, Ziquan Li, Liangjun Lu, Yu Li, Ngon Phu Wai, MingHua Zhang, Guo-Qiang Lo, Jianping Chen, Linjie Zhou. Field programmable silicon microring WDM transceiver leveraging monolithically integrated phase-change materials[J]. PhotoniX. doi: 10.1186/s43074-025-00174-7
Citation: Xing Yang, Shihuan Ran, Ziquan Li, Liangjun Lu, Yu Li, Ngon Phu Wai, MingHua Zhang, Guo-Qiang Lo, Jianping Chen, Linjie Zhou. Field programmable silicon microring WDM transceiver leveraging monolithically integrated phase-change materials[J]. PhotoniX. doi: 10.1186/s43074-025-00174-7

Field programmable silicon microring WDM transceiver leveraging monolithically integrated phase-change materials

doi: 10.1186/s43074-025-00174-7
Funds:

This work was supported in part by the National Key R&D Program of China (2021YFB2801300), the National Natural Science Foundation of China (NSFC) (62135010, 62090052, 62305212), and the Shanghai Science and Technology Committee Rising‑Star Program (23QA1404500).

  • Received Date: 2025-02-18
  • Accepted Date: 2025-05-16
  • Rev Recd Date: 2025-05-11
  • Available Online: 2025-05-27
  • Silicon microring resonators (MRRs) with embedded PN junctions have emerged as pivotal components in high-capacity optical interconnects, serving as modulators or photodetectors due to their compact size, low power consumption, high bandwidth, and inherent wavelength selectivity. However, their resonance wavelengths are highly sensitive to fabrication-induced variations—nanometer-scale deviations in waveguide dimensions can result in significant resonance shifts—necessitating effective post-fabrication tuning mechanisms. Conventional solutions like integrating thermal phase shifters with MRRs enable wavelength tuning but at the cost of increased power consumption. Additionally, various wavelength trimming techniques including germanium ion implantation, continuous laser trimming, femtosecond laser trimming, and polymer material cladding, either have a limited tuning range or require a complex system, and hence they are not suitable for field programming of resonance wavelength. In this work, we introduce a novel integration of low-loss phase change material Sb2Se3 directly atop the PN junctions of silicon MRRs, enabling precise post-fabrication resonance trimming without altering the MRR physical dimensions or performance characteristics. By applying a forward-biased electrical pulse through the PN junction, we induce a phase transition in the Sb2Se3, achieving resonance wavelength tuning across an entire free spectral range (FSR) with minimal impact on modulation and detection capabilities and without the need for extra heating pads. We demonstrate the effectiveness of this method by uniformly aligning the resonance wavelengths of four cascaded SbSe-integrated MRRs, each capable of 100 Gbps on–off keying (OOK) modulation and detection, culminating in a combined data rate of 400 Gbps. Additionally, as enabled by such unique programmability, we propose a feedback scheme to counteract ambient temperature fluctuations as a real-time thermal management strategy during operation, employing one of the MRRs as an optical power monitor to stabilize the modulation of the remaining resonators. Via the non-volatile programmability, our approach significantly reduces static power consumption associated with wavelength adjustment. The use of a PN junction to trigger phase transition with forward-biased electrical pulses not only facilitates the in-situ wavelength trimming but also preserves the MRR perimeter with enough FSR to support the number of channels available for wavelength multiplexing. These advancements position Sb2Se3-integrated MRRs as a promising solution for large-scale, energy-efficient photonic transceivers in next-generation optical communication systems.
  • loading
  • [1]
    Shekhar S, Bogaerts W, Chrostowski L, et al. Roadmapping the next generation of silicon photonics. Nature Communications. 2024;15(1):751.
    [2]
    Wu H, Dai Q. Artificial intelligence accelerated by light. Nature. 2021;589(7840):25–6.
    [3]
    Ran S, Zhou G, Li Y, et al. Micro-ring modulators with integrated inductor to mitigate bandwidth and extinction ratio trade-off. IEEE Photon Technol Lett. 2024;36(4):231–4.
    [4]
    Yuan Y, Peng Y, Sorin WV, et al. A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions. Nat Commun. 2024;15(1):918.
    [5]
    Xie C, Raj M, Joshi A, et al. A 64 Gb/s NRZ O-Band Ring Modulator with 3.2 THz FSR for DWDM Applications [Z]. Optical Fiber Communication Conference (OFC) 2024. 2024.https://doi.org/10.1364/OFC.2024.Tu2D.5
    [6]
    Peng Y, Yuan Y, Sorin WV, et al. An 8 × 160 Gb s−1 all-silicon avalanche photodiode chip. Nat Photon. 2024;18:928–34.
    [7]
    Zhang W, Zhu J, Li K, et al. Universal Silicon ring resonator for error free transmission links. Photonics Res. 2023;12(4):701–11.
    [8]
    Yuan Y, Sorin WV, Liang D, et al. Mechanisms of enhanced sub-bandgap absorption in high-speed all-silicon avalanche photodiodes. Photonics Res. 2023;11(2):337.
    [9]
    Rizzo A, Novick A, Gopal V, et al. Massively scalable Kerr comb-driven silicon photonic link. Nat Photon. 2023;17(9):781–90.
    [10]
    Rizzo A, Daudlin S, Novick A, et al. Petabit-scale silicon photonic interconnects with integrated kerr frequency combs. IEEE J Sel Top Quantum Electron. 2023;29(1):1–20.
    [11]
    Novick A, James A, Dai L Y, et al. High-bandwidth density silicon photonic resonators for energy-efficient optical interconnects. Appl Phys Rev. 2023, 10(4).
    [12]
    Liu Y, Zhang H, Liu J, et al. Parallel wavelength-division-multiplexed signal transmission and dispersion compensation enabled by soliton microcombs and microrings. Nat Commun. 2024;15(1):3645.
    [13]
    James A, Novick A, Rizzo A, et al. Scaling comb-driven resonator-based DWDM silicon photonic links to multi-Tb/s in the multi-FSR regime. Optica. 2023;10(7):832–40.
    [14]
    Omirzakhov K, Aflatouni F. 12.1 Monolithically Integrated Sub-63 fJ/b 8-Channel 256Gb/s Optical Transmitter with Autonomous Wavelength Locking in 45nm CMOS SOI [Z]. 2024 IEEE International Solid-State Circuits Conference (ISSCC). 2024: 218–20.https://doi.org/10.1109/isscc49657.2024.10454519.
    [15]
    Netherton A, Dumont M, Nelson Z, et al. 25.1 Short-Reach Silicon Photonic Interconnects with Quantum Dot Mode Locked Laser Comb Sources [Z]. 2024 IEEE International Solid-State Circuits Conference (ISSCC). 2024: 422–4.https://doi.org/10.1109/isscc49657.2024.10454400.
    [16]
    Levy CS, Xuan Z, Sharma J, et al. 8-λ × 50 Gbps/λ Heterogeneously Integrated Si-Ph DWDM Transmitter. IEEE J Solid-State Circuits. 2024;59:1–12.
    [17]
    Shi Y, Li X, Chen G, et al. Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz. Nat Photon. 2024;18(6):610–6.
    [18]
    Jayatilleka H, Frish H, Kumar R, et al. Post-Fabrication Trimming of Silicon Photonic Ring Resonators at Wafer-Scale. J Light Technol. 2021;39(15):5083–8.
    [19]
    Zhang W, Ebert M, Li K, et al. Harnessing plasma absorption in silicon MOS ring modulators. Nat Photon. 2023;17(3):273–9.
    [20]
    Chan DWU, Wu X, Lu C, et al. Efficient 330-Gb/s PAM-8 modulation using silicon microring modulators. Opt Lett. 2023;48(4):1036–9.
    [21]
    Zhang Y, Zhang H, Zhang J, et al. 240Gb/s optical transmission based on an ultrafast silicon microring modulator. Photonics Res. 2022;10(4):1127–33.
    [22]
    Sakib M, Kumar R, Ma C X, et al. A 240 Gb/s PAM4 Silicon Micro-Ring Optical Modulator. 2022 Optical Fiber Communications Conference and Exhibition (Ofc), 2022.
    [23]
    Milosevic MM, Chen X, Yu X, et al. Ion Implantation of germanium into silicon for critical coupling control of racetrack resonators. J Light Technol. 2020;38(7):1865–73.
    [24]
    Milosevic MM, Chen X, Cao W, et al. Ion Implantation in silicon for trimming the operating wavelength of ring resonators. IEEE J Sel Top Quantum Electron. 2018;24(4):1–7.
    [25]
    Chen B, Yu X, Chen X, et al. Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devices. Opt Express. 2018;26(19):24953–63.
    [26]
    Lee H S, Kiravittaya S, Kumar S, et al. Local tuning of photonic crystal nanocavity modes by laser-assisted oxidation. Applied Physics Letters, 2009, 95(19).
    [27]
    Guo T, Zhang M, Yin Y, et al. A Laser-trimming-assist wavelength-alignment technique for silicon microdonut resonators. IEEE Photon Technol Lett. 2017;29(5):419–22.
    [28]
    Chen CJ, Zheng J, Gu T, et al. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation. Opt Express. 2011;19(13):12480–9.
    [29]
    Bachman D, Chen Z, Prabhu AM, et al. Femtosecond laser tuning of silicon microring resonators. Opt Lett. 2011;36(23):4695–7.
    [30]
    Bachman D, Chen Z, Wang C, et al. Postfabrication phase error correction of silicon photonic circuits by single femtosecond laser pulses. J Light Technol. 2016;35(4):588–95.
    [31]
    Canciamilla A, Morichetti F, Grillanda S, et al. Photo-induced trimming of chalcogenide-assisted silicon waveguides. Opt Express. 2012;20(14):15807–17.
    [32]
    Lambert S, De Cort W, Beeckman J, et al. Trimming of silicon-on-insulator ring resonators with a polymerizable liquid crystal cladding. Opt Lett. 2012;37(9):1475–7.
    [33]
    Meng J, Gui Y, Nouri BM, et al. Electrical programmable multilevel nonvolatile photonic random-access memory. Light Sci Appl. 2023;12(1):189.
    [34]
    Chen R, Fang Z, Perez C, et al. Non-volatile electrically programmable integrated photonics with a 5-bit operation. Nat Commun. 2023;14(1):3465.
    [35]
    Delaney M, Zeimpekis I, Lawson D, et al. A new family of ultralow loss reversible phase-change materials for photonic integrated circuits: Sb2S3 and Sb2Se3. Adv Functional Mater. 2020;30:2002447.
    [36]
    Fang Z, Mills B, Chen R, et al. Arbitrary programming of racetrack resonators using low-loss phase-change material Sb2Se3. Nano Lett. 2023;24(1):97–103.
    [37]
    Fang Z, Chen R, Zheng J, et al. Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters. Nat Nanotechnol, 2022.
    [38]
    Delaney M, Zeimpekis I, Du H, et al. Nonvolatile programmable silicon photonics using an ultralow-loss Sb2Se3 phase change material. Sci Adv. 2021;7(25):eabg3500.
    [39]
    Zhang H, Xu L, Chen J, et al. Ultracompact Si-GST hybrid waveguides for nonvolatile light wave manipulation. IEEE Photonics J. 2018;10(1):1–10.
    [40]
    Zheng J, Khanolkar A, Xu P, et al. GST-on-silicon hybrid nanophotonic integrated circuits: a non-volatile quasi-continuously reprogrammable platform. Optical Materials Express. 2018;8(6):1551.
    [41]
    Zhang C, Wei M, Zheng J, et al. Nonvolatile multilevel switching of silicon photonic devices with In2O3/GST segmented structures. Adv Optic Mater. 2023;11(8):2202748.
    [42]
    Xu P, Zheng J, Doylend JK, et al. Low-loss and broadband nonvolatile phase-change directional coupler switches. ACS Photonics. 2019;6(2):553–7.
    [43]
    Li X, Youngblood N, Ríos C, et al. Fast and reliable storage using a 5bit, nonvolatile photonic memory cell. Optica. 2018;6(1):1–6.
    [44]
    Zhang H, Zhou L, Xu J, et al. Nonvolatile waveguide transmission tuning with electrically-driven ultra-small GST phase-change material. Sci Bull. 2019;64(11):782–9.
    [45]
    Wu C, Yu H, Li H, et al. Low-loss integrated photonic switch using subwavelength patterned phase change material. ACS Photonics. 2018;6(1):87–92.
    [46]
    Ríos C, Zhang Y, Shalaginov MY, et al. Multi-level electro-thermal switching of optical phase-change materials using graphene. Adv Photonics Res. 2020;2:2000034.
    [47]
    Chen R, Fang Z, Fröch JE, et al. Broadband nonvolatile electrically controlled programmable units in silicon photonics. ACS Photonics. 2022;9(6):2142–50.
    [48]
    Xia J, Wang Z, Yang R, et al. Ultrahigh endurance and extinction ratio in programmable silicon photonics based on a phase change material with ITO heater. Laser Photonics Rev. 2024;18(4):2300722.
    [49]
    Wei M, Xu K, Tang B, et al. Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics. Nat Commun. 2024;15(1):2786.
    [50]
    You JB, Kwon H, Kim J, et al. Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides. Opt Express. 2017;25(4):4284–97.
    [51]
    Teo TY, Krbal M, Mistrik J, et al. Comparison and analysis of phase change materials-based reconfigurable silicon photonic directional couplers. Optical Mater Express. 2022;12(2):606–21.
    [52]
    Zhang Y, Ríos C, Shalaginov M Y, et al. Myths and truths about optical phase change materials: a perspective. Appl Phys Lett. 2021, 118(21).
    [53]
    Yang X, Nisar MS, Yuan W, et al. Phase change material enabled 2 x 2 silicon nonvolatile optical switch. Opt Lett. 2021;46(17):4224–7.

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(1)

    Article Metrics

    Article views (29) PDF downloads(0) Cited by()
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return