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  • 主办单位:
    中国光学工程学会清华大学上海理工大学
  • 名誉主编: 庄松林 院士
  • 国际主编: 顾敏 院士
  • 主       编:
    孙洪波 教授仇旻 教授
  • 创       刊:2020年3月
  • ISSN:2662-1991
最新上线
Highly sensitive self-calibrating birefringence measurement based on anisotropic laser feedback polarization effect
Shiwei Deng, Xunda Chang, Jiayu Wang, Yifan Wang, Xin Xu, Kewu Li, Yidong Tan, Guangwei Hu
 doi: 10.1186/s43074-025-00208-0
Abstract(0) PDF(0)
Abstract:
Accurate measurements of dual parameters of phase retardance and retardance axis of birefringent materials are of fundamental importance to their fabrication and applications. However, current techniques typically exhibit limited versatility, suffering from high complexity, insufficient accuracy, and low efficiency. In this study, we propose and demonstrate the anisotropic laser feedback polarization effect for birefringent measurement, featuring simultaneous dual-parameter demodulation, unified polarization modulation-analysis architecture, high detection sensitivity, user-friendly operation, and versatile functionality. Importantly, such system can be self-calibrated with its own physical phenomena to reduce the installation derivation. To showcase the powerful effectiveness, we perform the static birefringence, dynamic birefringence variation, and spatial birefringence distribution, which remarkably exhibits the standard deviation of 0.0453° and 0.0939° for phase retardance and retardance axis azimuth, with the limit allowable sample transmittance around 10–5. This work demonstrates comprehensive applicability across diverse birefringence scenarios, extending the application of anisotropic laser feedback polarization effect, while establishing a novel strategy for birefringence measurement.
Photon avalanche nanomaterials: from spark to surge
Chang Liu, Yuzheng Wang, Yixun Fan, Liangliang Liang
 doi: 10.1186/s43074-025-00209-z
Abstract(5) PDF(0)
Abstract:
Photon avalanche (PA) upconversion, driven by a positive feedback loop that couples nonresonant ground-state absorption (GSA), resonant excited-state absorption (ESA), and highly efficient cross-relaxation (CR), gives rise to a threshold-triggered ultrahigh optical nonlinearity accompanied by uniquely prolonged rise-time dynamics. From spark to surge, this phenomenon can deliver tens to even hundreds of nonlinear orders at the nanoscale, redefining opportunities in imaging, sensing, and optical computing while opening a new paradigm for interrogating light–matter interactions.
Programmable structured DUV illumination by coherent harmonic generation at crystalline solids for nanometer-resolution inspection of periodic samples
Seungjai Won, Jungyoon Kim, Yungeun Oh, Taewon Kim, Seungman Choi, Byunggi Kim, Hongki Yoo, Seung-Woo Kim, Young-Jin Kim
 doi: 10.1186/s43074-025-00206-2
Abstract(12) PDF(0)
Abstract:
The continued narrowing of transistor pitch in semiconductor chips has boosted the demand for deep-ultraviolet (DUV, λ < 280 nm)-based high-resolution optical inspection and metrology. However, the lack of a beam control device for DUV wavelength due to the significant UV absorption in most optical materials has hindered the handy implementation of conventional high-resolution metrology techniques such as structured illumination microscopy (SIM) to the DUV regime. Here, we present a programmable DUV structured illumination for nanometer-resolution pitch and displacement inspection of periodic samples enabled by nonlinear third-harmonic generation. By manipulating a spatial phase of the near-infrared (NIR, λ = 800 nm) driving beam that is incident on crystalline solids, the emitted third harmonic beam at DUV (λ = 266 nm) can be spatially controlled so as to form a high-visibility sinusoidal distribution with a real-time adjustable pitch and orientation angle. The angle-tunable DUV structured beam allows observation of low-visibility periodic sample information in high-visibility frequency-down-converted Moiré patterns, with a magnification factor of up to 70 times. By analyzing the Moiré pattern pitch and orientation angle, the sample periods of 277.8 nm and 416.7 nm were reconstructed with an error of 1.9% (5.4 nm) and 0.5% (2.1 nm), respectively. Furthermore, a 20.0 nm lateral shift of the periodic sample – below Abbe’s diffraction limit – was measured with a repeatability of 5.3 nm via monitoring of the magnified Moiré pattern. Our DUV structured illumination will enable high-resolution monitoring of semiconductor processes such as transistor pitch variation and mask alignment.
Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory
M. Surýnek, A. Farkaš, J. Zubáč, P. Kubaščík, K. Olejník, F. Krizek, L. Nádvorník, T. Ostatnický, R. P. Campion, V. Novák, T. Jungwirth, P. Němec
 doi: 10.1186/s43074-025-00207-1
Abstract(11) PDF(0)
Abstract:
Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses.