Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory

M. Surýnek; A. Farkaš; J. Zubáč; P. Kubaščík; K. Olejník; F. Krizek; L. Nádvorník; T. Ostatnický; R. P. Campion; V. Novák; T. Jungwirth; P. Němec

doi:10.1186/s43074-025-00207-1

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M. Surýnek, A. Farkaš, J. Zubáč, P. Kubaščík, K. Olejník, F. Krizek, L. Nádvorník, T. Ostatnický, R. P. Campion, V. Novák, T. Jungwirth, P. Němec. Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory[J]. PhotoniX. doi: 10.1186/s43074-025-00207-1

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Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory

doi: 10.1186/s43074-025-00207-1

1.
Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, Prague 2, 121 16, Czech Republic
2.
Institute of Physics ASCR, v
3.
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK

Funds: This work was supported by TERAFIT project No. CZ.02.01.01/00/22_008/0004594 funded by Ministry of Education Youth and Sports of the Czech Republic (MEYS CR), programme Johannes Amos Comenius (OP JAK), call Excellent Research. The authors acknowledge funding by the Czech Science Foundation (grant no. 21–28876J), by ERC Advanced Grant no. 101095925, by the Grant Agency of the Charles University (grants no. 166123 and SVV–2024–260720), by CzechNanoLab Research Infrastructure supported by MEYS CR (LM2023051), and by MEYS CR project LNSM-LNSpin.

Received Date: 2025-07-24
Accepted Date: 2025-10-22
Rev Recd Date: 2025-10-15

Available Online: 2025-11-04

Abstract

Abstract

Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses.
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- Ultrafast optical switching')">" data-track="click" data-track-action="view keyword" data-track-label="link">Ultrafast optical switching,
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- Short-term to long-term memory transfer')">" data-track="click" data-track-action="view keyword" data-track-label="link">Short-term to long-term memory transfer,
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References(81)

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