Vacuum-ultraviolet (λ &lt; 200&nbsp;nm) photodetector array

Siqi Zhu; Zhuogeng Lin; Zhao Wang; Lemin Jia; Naiji Zhang; Wei Zheng

doi:10.1186/s43074-024-00120-z

Vacuum-ultraviolet (λ < 200 nm) photodetector array

doi: 10.1186/s43074-024-00120-z

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出版历程
- 收稿日期: 2023-11-22
- 录用日期: 2024-02-20
- 修回日期: 2024-01-29
- 网络出版日期: 2024-03-13

Vacuum-ultraviolet (λ < 200 nm) photodetector array

State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-Sen University, Shenzhen, 518107, China

Funds: This work was financially supported by the National Natural Science Foundation of China (No. 62374186) and the Guangdong Natural Science Funds for Distinguished Young Scholars (No. 2021B1515020105).

摘要

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Abstract:
The vacuum-ultraviolet (VUV, 10–200 nm) imaging photodetector (PD) based on the wide bandgap semiconductor (WBGS) can realize a more detailed observation of solar storms than the silicon ones. Here, an 8 × 8 VUV PD array based on the semiconductor AlN with an ultra-wide bandgap is presented, exhibiting the shortest cutoff wavelength (203 nm) reported so far. The PD array with a Pt/AlN/SiC/Ti/Au photovoltaic structure shows an excellent selective response to VUV light, an extremely low dark current density of 2.85 × 10^–11 A·cm⁻²@ -2 V, a responsivity of 0.054 A·W⁻¹@ 0 V and an ultra-short rise time of 13 ns. Also, the clear boundaries and an obvious contrast between light and dark of the VUV image displayed in the imaging measurement indicate the good imaging ability of this PD array, which can be used for the imaging application with high signal-to-noise ratio and high response speed. These results provide rich experience for the development of VUV imaging PDs based on WBGSs both in their fabrication and the practical applications in VUV detection.

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参考文献(48)

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